New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV
A new paper claims that directed self-assembly could be key to patterning lines below 10nm, but line-edge roughness and manufacturing challenges still present substantial barriers.
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New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV
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A new paper claims that directed self-assembly could be key to patterning lines below 10nm, but line-edge roughness and manufacturing challenges still present substantial barriers.
The post appeared first on .
New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV